Lluis Simon and Alex Belloti: Characterisation of Silicon Detectors

Wednesday Oct 7, 2015, 1:00 PM → 2:00 PM Europe/Madrid

Seminar (IFAE)

Jelena Aleksic (IFAE), Joern Lange (IFAE Barcelona), Stefania Bordoni (IFAE)

Highly segmented silicon sensors are widely used in High Energy Physics as precision tracking devices. Upgrades of the CERN experiments to high luminosities set unprecedented requirements with respect to radiation hardness and require the development of new generations of silicon detectors. To this end, it is crucial to gain a deep understanding of the charge collection and the underlying signal formation in the silicon sensors. In this context, two Graduation Projects (Treball de Fi de Grau) have been performed in the IFAE Pixel Lab. One was dealing with the study of charge collection in highly irradiated 3D pixel detectors, using a Sr90 setup and a charge-sensitive readout based on the ATLAS FE-I4 front-end chip. The other project focused on the commissioning of a Transient Current Technique Setup based on red and infrared lasers and a fast, current-sensitive readout.

1:00 PM → 1:05 PM Introduction and General Announcements

Speakers: Dr Jelena Aleksic (IFAE), Joern Lange (IFAE Barcelona), Stefania Bordoni (IFAE)

1:05 PM → 1:25 PM Presentation of the Week

1:25 PM → 1:35 PM Discussion

1:35 PM → 2:00 PM Pizza