Lluis Simon and Alex Belloti: Characterisation of Silicon Detectors

Europe/Madrid
Seminar (IFAE)

Seminar

IFAE

Jelena Aleksic (IFAE), Joern Lange (IFAE Barcelona), Stefania Bordoni (IFAE)
Description
Highly segmented silicon sensors are widely used in High Energy Physics as precision tracking devices. Upgrades of the CERN experiments to high luminosities set unprecedented requirements with respect to radiation hardness and require the development of new generations of silicon detectors. To this end, it is crucial to gain a deep understanding of the charge collection and the underlying signal formation in the silicon sensors. In this context, two Graduation Projects (Treball de Fi de Grau) have been performed in the IFAE Pixel Lab. One was dealing with the study of charge collection in highly irradiated 3D pixel detectors, using a Sr90 setup and a charge-sensitive readout based on the ATLAS FE-I4 front-end chip. The other project focused on the commissioning of a Transient Current Technique Setup based on red and infrared lasers and a fast, current-sensitive readout.
Participants
  • Abelardo Moralejo
  • Alfonso Garcia
  • Bruno Bourguille
  • Daniel Guberman
  • Daniel Moreno
  • David Vázquez Furelos
  • Eduard Masso
  • Emanuele Cavallaro
  • Fabian Foerster
  • Giuliano Panico
  • Imma Riu
  • Ivan Lopez Paz
  • J.R. Espinosa
  • Javier Rico
  • Joern Lange
  • John E Ward
  • Ke Yang
  • Leyre Nogués
  • Machiel Kolstein
  • Paolo Cumani
  • quiros mariano
  • Rafel Escribano
  • Raimon Casanova
  • Sebastian Grinstein
  • Sergi Gonzalez-Solis
  • Tarek Hassan Collado
  • thibaud vantalon
  • Thorsten Lux
    • 13:00 13:05
      Introduction and General Announcements 5m
      Speakers: Dr Jelena Aleksic (IFAE), Joern Lange (IFAE Barcelona), Stefania Bordoni (IFAE)
    • 13:05 13:25
      Presentation of the Week 20m
    • 13:25 13:35
      Discussion 10m
    • 13:35 14:00
      Pizza 25m
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