Description
Graphene is an attractive material for optoelectronics and photo detection applications because it offers a broad spectral bandwidth and fast response times. However, weak light absorption and the absence of a gain mechanism that can generate multiple charge carriers from one incident photon. Recently, a gain of 10^8 electrons per photon using hybrid Silicon-Graphene photo detector covered with a layer of quantum-dots was demonstrated (G.Konstantatos et al., Nature Nanotechnology, 10.1038/NNANO.2012.60). IFAE has recently started a collaboration with the ICFO on this issue, we will describe the scope of the project and the basic physics of the new technology.
Participants
Abril Oscar
Alex Pomarol
Alfonso Garcia
ALICIA LOPEZ-ORAMAS
Antonella Succurro
christophe grojean
Cristobal Padilla
Dilber UZUN
E. Masso
Ekaterina Mikhaylova
Federico Sanchez
Geraldine Servant
Gerard Ariño
Gianluca De Lorenzo
GONZALEZ MUNOZ Adiv
Imma Riu
Ivan Lopez Paz
Javier Caravaca
Javier Rico
Joaquim Palacio Navarro
Joern Lange
Jonathan Vo
Jorge Jimenez
Jose-Gabriel Macias-Montero
Laia Cardiel Sas
Lars Hofer
Lluïsa-M. Mir
Machiel Kolstein
Manel Martinez
MARIO MARTINEZ
Martine Bosman
María Pilar Casado Lechuga
Mateo García Pepin
Michela Ieva
Oriol Pujolas
Oscar Blanch Bigas
Otger Ballester
Sergi Gonzalez-Solis
Thorsten Lux